The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
May. 15, 2003
Toshio Saitoh, Akiruno, JP;
Kensuke Ishikawa, Ome, JP;
Hiroshi Ashihara, Ome, JP;
Tatsuyuki Saito, Ome, JP;
Toshio Saitoh, Akiruno, JP;
Kensuke Ishikawa, Ome, JP;
Hiroshi Ashihara, Ome, JP;
Tatsuyuki Saito, Ome, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device has a first insulating film deposited over a semiconductor substrate, an interconnect opening portion formed in the first insulating film, an interconnect disposed in the interconnect opening portion, and a second insulating film formed over the first insulating film and the interconnect. The interconnect has a first conductor film, a second conductor film formed via the first conductor film and comprised of one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride, a third conductor film formed via the first and second conductor films and comprised of a material having good adhesion with copper; and a fourth conductor film formed via the first, second and third conductor conductor film having a copper as a main component. Thus, it is possible to improve adhesion between a conductor film composed mainly of copper and another conductor film having a copper-diffusion barrier function in the interconnect.