The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Nov. 05, 1998
Kimihiro Matsuse, Inagi, JP;
Hayashi Otsuki, Nakakoma-gun, JP;
Kimihiro Matsuse, Inagi, JP;
Hayashi Otsuki, Nakakoma-gun, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WFgas and at least one of SiRgas, SiHClgas and SiHgas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NHgas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.