The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Jun. 14, 2002
Toshiya Uenishi, Akishima, JP;
Satoshi Meguro, Hinode, JP;
Masaharu Kubo, Hachioji, JP;
Masataka Kato, Koganei, JP;
Hideo Miura, Koshigaya, JP;
Norio Suzuki, Mito, JP;
Toshiya Uenishi, Akishima, JP;
Satoshi Meguro, Hinode, JP;
Masaharu Kubo, Hachioji, JP;
Masataka Kato, Koganei, JP;
Hideo Miura, Koshigaya, JP;
Norio Suzuki, Mito, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
To suppress oxidation of the inner walls of element isolation grooves otherwise occurring during thermal oxidation processes, a nitrogen introducing layer, that has a lower diffusion coefficient relative to an oxidizing agent, is formed at the surface portion of a silicon oxide film buried within an element isolation groove. This nitrogen introduced layer functions as a barrier layer for precluding the oxidizer (such as oxygen, water or the like) in vapor phase from diffusing into the silicon oxide film during thermal processing steps. The nitrogen introduced layer is formed by performing nitrogen ion implantation into the entire surface of a substrate and subsequently applying thermal processing to the substrate to thereby activate the nitrogen that has been doped.