The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Sep. 04, 2003
Takashi Watadani, Hyogo, JP;
Hiroshi Oshita, Hyogo, JP;
Takashi Watadani, Hyogo, JP;
Hiroshi Oshita, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
At the time of performing a polishing process on a tungsten film and a silicon oxide film, based on the relation between a residual step and pattern density preliminarily obtained while changing polishing parameters, from pattern density of plugs in the polishing step and a predetermined residual step required, polishing parameters are determined so that a residual step does not exceed a predetermined residual step 'h'. With the determined polishing parameters, the polishing process is performed on the tungsten film and the silicon oxide film so that the films are planarized, and plugs are formed in contact holes. As a result, a semiconductor device in which a step does not exceeds a predetermined residual step by a polishing process is obtained.