The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Sep. 30, 2002
Yuri Nikolaevich Tolmachev, Yongin, KR;
Dong-joon Ma, Anyang, KR;
Chang-wook Moon, Seoul, KR;
Hea-young Yoon, Yongin, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.