The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Dec. 18, 2002
Chao-Hsiang Yang, Hsin-chu, TW;
Chun-Ming Su, Pingjen, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method of forming a metal fuse in a semiconductor device. In one embodiment, a specific additional mask is applied to form the metal fuse to reduce the thickness of the fuse. The method also includes forming a fuse window opening that is very shallow in the semiconductor device. The shallower opening allows for better control and removal of the remaining passivation left over the fuse during a fuse burning laser process. The thinner fuse and the thinner remaining passivation reduce the amount of laser energy required to vaporize the oxide and to cut the fuse. The location of the fuse also greatly enlarges the laser energy window that can be utilized to make laser repairs. The larger energy window results in a higher laser repair success ratio even if some deviation in the fabrication process occurs.