The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2004

Filed:

Sep. 19, 2002
Applicant:
Inventors:

Jung-Hyun Hwang, Anyang-si, KR;

No-Hyun Huh, Yongin-si, KR;

Chang-Won Choi, Seoul, KR;

Byeung-Wook Choi, Suwon-si, KR;

Doo-Won Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 ; C23C 1/600 ;
U.S. Cl.
CPC ...
H05H 1/00 ; C23C 1/600 ;
Abstract

An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.


Find Patent Forward Citations

Hwang, Jung-Hyun. (2004). Window for allowing end point of etching process to be detected and etching device comprising the same (U.S. Patent No. 6835276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6835276

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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