The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
May. 23, 2001
Applicant:
Inventors:
Han Qingyuan, Columbia, MD (US);
Carlo Waldfried, Falls Church, VA (US);
Orlando Escorcia, Falls Church, VA (US);
Gary Dahrooge, Germantown, MD (US);
Ivan Berry, Ellicott City, MD (US);
Assignee:
Axcelis Technology, Inc., Beverly, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 7/04 ;
U.S. Cl.
CPC ...
B08B 7/04 ;
Abstract
A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.