The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Nov. 20, 2002
Chun-Jen Weng, Tainan, TW;
Juan-Yi Chen, Chiai, TW;
Hong-Tsz Pan, Hsinchu, TW;
Cedric Lee, Hsinchu, TW;
Der-Yuan Wu, Hsinchu, TW;
Jackson Lin, Taitung, TW;
Yeong-Song Yen, Taipei, TW;
Lawrence Lin, Taipei, TW;
Ying-Chung Tseng, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.