The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Oct. 29, 2002
Shijian Li, San Jose, CA (US);
Yaxin Wang, San Jose, CA (US);
Fred C. Redeker, Fremont, CA (US);
Tetsuya Ishikawa, Santa Clara, CA (US);
Alan W. Collins, San Francisco, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An improved deposition chamber ( ) includes a housing ( ) defining a chamber ( ) which houses a substrate support ( ). A mixture of oxygen and SiF is delivered through a set of first nozzles ( ) and silane is delivered through a set of second nozzles ( ) into the chamber around the periphery ( ) of the substrate support. Silane (or a mixture of silane and SiF ) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices ( ). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.