The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2004

Filed:

Oct. 24, 2002
Applicant:
Inventors:

Nobuo Matsuki, Tama, JP;

Seijiro Umemoto, Tama, JP;

Yasuyoshi Hyodo, Tama, JP;

Assignee:

ASM Japan K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/6509 ; C23F 1/00 ; H01L 2/1306 ;
U.S. Cl.
CPC ...
C23C 1/6509 ; C23F 1/00 ; H01L 2/1306 ;
Abstract

A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.


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