The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Sep. 11, 2003
Bor-Wen Chan, Hsinchu, TW;
Fang-Cheng Chen, Hsin-chu, TW;
Hsien-Kuang Chiu, Hsinchu, TW;
Yuan-Hung Chiu, Taipei, TW;
Han-Jan Tao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A plasma etch method for forming a patterned target layer within a microelectrcnic product forms an etch residue layer adjoining a patterned mask layer formed upon a blanket target layer. After removing the patterned mask layer, the etch residue layer is laterally increased to form a laterally increased etch residue layer. The laterally increased etch residue layer is employed as an etch mask for forming the patterned target layer from the blanket target layer. The method is particularly useful for forming gate electrodes within semiconductor products.