The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Jan. 09, 2002
Kei-Wei Chen, Yung-Ho, TW;
Kuo-Hsiu Wei, Banchiau, TW;
Yu-Kin Lin, Hsin-chu, TW;
Ting-Chun Wang, Taoyuan, TW;
Ying-Lang Wang, Tien-chung Village, TW;
Shih-Tzung Chang, Feugyuan, TW;
Taiwan Semiconductor Manufacturing Company, Limited, Hsin-Chu, TW;
Abstract
For 0.18 micron technology, it is common practice to use silicon oxynitride as an anti-reflective layer for defining the via etch patterns. It has however been found that, using current technology, residual particles of oxynitride get left behind. The present invention solves this problem by subjecting the surface from which the silicon oxynitride was removed to a high pressure rinse of an aqueous solution that includes a surfactant such as tetramethyl ammonium hydroxide or isopropyl alcohol. These surfactants serve to modify the hydrophobic behavior of the silicon oxynitride particles so that they no longer cling to the surface.