The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
Jun. 06, 2003
Renesas Technology Corp., Tokyo, JP;
Abstract
It is to be made possible to eliminate unevenness of the inductances of bonding wires and to reduce the size of semiconductor devices. Over the surface of a semiconductor device in whose MISFET formation area a MISFET comprising a plurality of unit MISFETs connected in parallel, gate electrode pads electrically connected to the gate electrode of the MISFET and drain electrode pads electrically connected to the drain electrode of the same are arranged in a row each. The intervals of the gate electrode pads become gradually shorter from the end areas towards the central area of the electrode array of the gate electrode pads. The intervals of the drain electrode pads also become gradually shorter from the end areas towards the central area of the electrode array of the drain electrode pads.