The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2004
Filed:
May. 16, 2003
Applicant:
Inventors:
Takahiro Maruyama, Tokyo, JP;
Ryoichi Yoshifuku, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ;
Abstract
A laminated film including a thermal oxide film, a polysilicon film and a silicon nitride film is formed on a silicon substrate, and the laminated film is patterned by using a resist pattern as a mask. An element-isolating trench is formed in the silicon substrate by using a patterned laminated film as a mask, and a silicon oxide film is buried in the element-isolating trench. After removing the silicon nitride film, unnecessary portions of the silicon oxide film are removed by CMP by using the polysilicon film as a stopper film. Then, the polysilicon film and the thermal oxide film are removed.