The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Dec. 27, 2002
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1425 ;
Abstract
A method of forming a gate dielectric includes the steps of forming a gate oxide layer on a substrate, forming a buffer layer over the gate oxide layer and incorporating nitrogen into the gate oxide layer through the buffer layer. A semiconductor device having a gate structure is also provided. The gate includes a nitrogen enriched gate oxide layer formed on a substrate, a silicon nitride or poly-silicon buffer layer formed on the gate oxide layer and a gate electrode formed over the buffer layer.
Cheng, Juing-Yi. (2004). Method of forming nitrogen enriched gate dielectric with low effective oxide thickness (U.S. Patent No. 6821868). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6821868
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile