The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2004

Filed:

Jan. 27, 2003
Applicant:
Inventors:

Yao-Ting Shao, Hsinchu, TW;

Ishibashi Shigeru, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

A method of manufacturing a contact is disclosed. A substrate is provided, and a first dielectric layer and a metal layer are formed thereon in sequence. A second dielectric layer is formed on the metal layer and the first dielectric layer. A bottom contact is formed in the second dielectric layer to electrically connect to the metal layer. A node contact is formed in the first and second dielectric layers. A capacitor is formed on the dielectric layer to electrically connect to the node contact, and a middle contact is formed on the second dielectric layer to electrically connect to the bottom contact. A third dielectric layer is formed on the capacitor, the middle contact and the second dielectric layer. A top contact is formed in the third dielectric layer to electrically connect to the middle contact.


Find Patent Forward Citations

Loading…