The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2004

Filed:

Sep. 19, 2002
Applicant:
Inventors:

Thomas E. Grebs, Mountaintop, PA (US);

Christopher B. Kocon, Plains, PA (US);

Rodney S. Ridley, Sr., Mountaintop, PA (US);

Gary M. Dolny, Mountaintop, PA (US);

Nathan Lawrence Kraft, Wilkes-Barre, PA (US);

Louise E. Skurkey, Conyngham, PA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

In a power semiconductor device , a continuous trench has an outer circumferential portion that includes a field plate and inner portions that carry include one or more gate runners to that the gate runners and the field plate are integral with each other. The trench structure is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.


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