The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Nov. 14, 2000
Applicant:
Inventors:
Loi Nguyen, Carrollton, TX (US);
Ravishankar Sundaresan, Garland, TX (US);
Assignee:
STMicroelectronics, Inc., Carrollton, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A VLSI contact formation process in which a nitride layer is used to stop a wet oxide etch. An anisotropic plasma etch is used to cut a substantially vertical contact hole through the nitride and underlying layers. Thus, the resulting contact hole has a “Y”-shaped profile.