The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Dec. 17, 2002
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/182 ; H01L 2/1336 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/182 ; H01L 2/1336 ; H01L 2/14763 ;
Abstract
A method for improving CMP polishing uniformity and reducing or preventing cracking in a semiconductor wafer process surface by reducing stress concentrations adjacent to dummy features including providing a semiconductor wafer process surface including active features and dummy features formed adjacently to the active features to improve a CMP polishing uniformity said dummy features each shaped to define an enclosed area in said semiconductor wafer process surface plane comprising at least 5 corner portions; and, performing a CMP process on said semiconductor wafer process surface.