The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Sep. 04, 2002
Wei-Jen Wu, Tainan, TW;
Sung-Cheng Chiu, Jubei, TW;
Ching-Jiunn Huang, Chang hua, TW;
Cheng-Ming Wu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for developing a photo-exposed photoresist layer to improve a critical dimension uniformity (CDU) for a semiconductor device manufacturing process including providing a semiconductor process wafer having a process surface comprising a photoresist layer photo-exposed according to an exposure pattern; dispensing a predetermined amount of developer solution over a stationary semiconductor process wafer to form a film of developer solution covering the process surface; partially developing the exposed portions of the photoresist layer comprising maintaining the semiconductor process wafer in a stationary position for a predetermined time period; rotating the semiconductor process wafer for a predetermined period of time to remove a portion of the developer solution; and, repeating the steps of dispensing, partially developing, and rotating, for a predetermined number of repetition cycles to complete a photoresist development process.