The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Jun. 24, 2003
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1338 ; H01L 2/18238 ; H01L 2/104 ; H01L 2/1265 ;
U.S. Cl.
CPC ...
H01L 2/1338 ; H01L 2/18238 ; H01L 2/104 ; H01L 2/1265 ;
Abstract
A manufacturing process for fabricating field effect transistors is disclosed comprising the generation of a strained surface layer on the surface of the substrate on which the transistor is to be fabricated. The strained surface layer is generated by implanting xenon and/or other heavy inert ions into the substrate. Implantation can be performed both after or prior to the gate oxide growth. The processing afterwards is carried out as in conventional MOS technologies. It is assumed that the strained surface layer improves the channel mobility of the transistor.