The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Feb. 19, 2003
Naoki Shibata, Aichi-ken, JP;
Toshiya Uemura, Aichi-ken, JP;
Makoto Asai, Aichi-ken, JP;
Yasuo Koide, Ibaragi-ken, JP;
Masanori Murakami, Kyoto, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
An AlN buffer layer ; a silicon (Si)-doped GaN high-carrier-concentration n layer ; an Si-doped n-type Al Ga N n-cladding layer ; an Si-doped n-type GaN n-guide layer ; an active layer having a multiple quantum well (MQW) structure, and including a Ga In N well layer (thickness: about 2 nm) and a Ga In N barrier layer (thickness: about 4 nm), the layers and being laminated alternately; an Mg-doped GaN p-guide layer ; an Mg-doped Al Ga N p-cladding layer ; and an Mg-doped GaN p-contact layer are successively formed on a sapphire substrate. A p-electrode is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.