The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Jul. 05, 2002
Jie-Shing Wu, Hsin-Chu, TW;
Hsueh-Li Sun, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for forming a microelectronic fabrication, there is ion implanted into a corner of a topographic feature within a microelectronic substrate a dose of an implanting ion such as to effect rounding of the corner of the topographic feature when thermally oxidizing the microelectronic substrate. The dose of the implanting ion is implanted while employing a laterally etched mask layer as an ion implantation mask layer which exposes the corner. The dose of the implanting ion is selected from the group consisting of silicon containing ions, germanium containing ions, arsenic containing ions, phosphorus containing ions and boron containing ions, such to provide for rounding of the corner with enhanced process efficiency.