The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Aug. 13, 2002
Pu-Fan Chen, Taipei, TW;
Chao-Po Lu, Hsinchu, TW;
Hsi-Shen Chuang, Hsinchu, TW;
Yi-Jen Chen, Tainan, TW;
Chin-Tsai Chen, Kaohsiung, TW;
Tsukada Kazunori, Hsin Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.