The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2004
Filed:
Jan. 21, 2003
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The problem of gate oxide damage as a result of electrostatic discharges has been overcome by including within the drain of the ESD protection device a region having very high defect density. Its depth within the drain is such that no action occurs when applied voltages are low. However, when a high voltage is applied, the depletion layer grows wide enough to touch this region thereby allowing substantial current flow into the substrate which results in lowering the voltage to a safe level. The high defect density region is formed through ion implantation of relatively heavy ions such as germanium. This is done after completion of the normal manufacturing process including SALICIDATION, no significant heating of the device after that being permitted.