The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2004

Filed:

Aug. 15, 2002
Applicant:
Inventors:

Wei-Ming Chen, HsinChu, TW;

Kun-Yu Liu, HsinChu, TW;

Chun-Chieh Chen, HsinChu, TW;

Lien-Che Ho, HsinChu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract

The present invention provides a method of producing an added defect count for monitoring the property of chambers or wafers. First, a proper pre-process sensitivity is determined with map to map process by maximizing the summation of a mapping rate and a catching rate. Second, a wafer is scanned with the proper pre-process sensitivity and a pre-process particle number P is recorded. Third, a manufacturing step is processed on the wafer. Fourth, the wafer is scanned with the most sensitive scale of the post-process sensitivities and a post-process particle number P is recorded. Finally, the post-process particle number P is subtracted from the pre-process particle number P .


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