The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
May. 09, 2002
Chia-chi Chung, Hsinchu, TW;
Shin-Yi Tsai, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
The present invention generally relates to a dual damascene processing method using a silicon rich oxide (SRO) layer thereof and its structure. In the dual damascene process, a first dielectric layer, an etching stop layer, such as a silicon rich oxide layer, and a second dielectric layer are sequentially formed on a semiconductor substrate, which is provided with metal connections therein. Then, the present invention utilizes photolithography and etching technique to obtain a dual damascene structure profile having a trench and a via hole. The present invention uses the silicon rich oxide layer as the etching stop layer so as the present invention can achieve a better trench microloading and better bottom profile. Beside, the present invention does not increase the dielectric constant index (K) of the inter metal dielectric (IMD).