The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2004

Filed:

Jan. 15, 2002
Applicant:
Inventors:

Bum Ki Moon, Tokyo, JP;

Gerhard Adolf Beitel, Kamakura, JP;

Nicolas Nagel, Yokohama, JP;

Andreas Hilliger, Yokohama, JP;

Koji Yamakawa, Kawasaki, JP;

Keitaro Imai, Yokohama, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract

An barrier stack for inhibiting diffusion of atoms or molecules, such as O is disclosed. The barrier slack includes first and second barrier layers formed from, for example, Ir, Ru, Pd, Rh, or alloys thereof. The first barrier layer is passivated with O using, for example, a rapid thermal oxidation (RTO) prior to formation of the second barrier layer. The RTO forms a thin oxide layer on the surface of the first barrier layer. The thin oxide layer passivates the grain boundaries of the first barrier layer as well as promoting mismatching of the grain boundaries of the first and second barrier layer.


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