The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Feb. 11, 2002
Applicant:
Inventors:
Hidemitsu Aoki, Tokyo, JP;
Hiroaki Tomimori, Tokyo, JP;
Norio Okada, Tokyo, JP;
Tatsuya Usami, Tokyo, JP;
Koichi Ohto, Tokyo, JP;
Takamasa Tanikuni, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1324 ;
U.S. Cl.
CPC ...
H01L 2/1324 ;
Abstract
In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection with a source gas comprising a nitrogen element being used, a copper nitride layer is formed, and thereafter a silicon nitride film is formed. Hereat, under the copper nitride layer , a thin copper silicide layer is formed.