The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2004
Filed:
Aug. 28, 2001
Applicant:
Inventors:
Qi Xiang, San Jose, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
John Clayton Foster, Mountain View, CA (US);
Paul L. King, Mountain View, CA (US);
Eric N. Paton, Morgan Hill, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A method for preventing the thermal decomposition of a high-K dielectric layer of a gate electrode during the formation of a metal silicide on the gate electrode by using nickel as the metal component of the silicide.