The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
May. 07, 2003
Masayuki Suzuki, Kokubunji, JP;
Shinji Nishihara, Koganei, JP;
Masashi Sahara, Kodaira, JP;
Shinichi Ishida, Higashimurayama, JP;
Hiromi Abe, Tokyo, JP;
Sonoko Tohda, Higashimurayama, JP;
Hiroyuki Uchiyama, Higashimurayama, JP;
Hideaki Tsugane, Fussa, JP;
Yoshiaki Yoshiura, Ushiku, JP;
Other;
Abstract
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.