The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Feb. 06, 2003
Yasuyuki Tamura, Kawasaki, JP;
Yusuke Morisaki, Kawasaki, JP;
Yoshihiro Sugita, Kawasaki, JP;
Kiyoshi Irino, Kawasaki, JP;
Takayuki Aoyama, Kawasaki, JP;
Chikako Yoshida, Kawasaki, JP;
Yoshihiro Sugiyama, Kawasaki, JP;
Hitoshi Tanaka, Kawasaki, JP;
Kanetake Takasaki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.