The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Aug. 30, 2002
Anthony Chen, Pleasanton, CA (US);
Gladys So-Wan Lo, Fremont, CA (US);
LAM Research Corporation, Fremont, CA (US);
Abstract
H O vapor is used as a processing gas for stripping photoresist material from a substrate having a patterned photoresist layer previously used as an ion implantation mask, wherein the patterned photoresist layer is defined by a photoresist crust covering a bulk photoresist portion. Broadly speaking, the H O vapor is demonstrated to more efficiently strip the photoresist material having a cross-linked photoresist crust without causing the photoresist crust to pop and without causing the bulk photoresist to be undercut. Thus, H O vapor provides a safe, efficient, and economical processing gas for stripping photoresist material having a photoresist crust resulting from an ion implantation process.