The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Feb. 06, 2003
Applicant:
Inventors:
Assignee:
Anelva Corporation, Fuchu, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 7/24 ;
U.S. Cl.
CPC ...
H01J 7/24 ;
Abstract
This application discloses the technique of the RF plasma processing using two RF waves of different frequencies, where plasma is generate and retained sufficiently and stably. The first frequency is for generating plasma by igniting a discharge, and the second frequency is for generating self-biasing voltage at a substrate to be processed. The wave of the second frequency is applied with a time-lag after applying the RF wave of the first frequency. This application also discloses the impedance matching technique in the RF plasma processing, where impedance to be provided is optimized both for igniting the discharge and for stabilizing the plasma.