The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2004

Filed:

Dec. 21, 2001
Applicant:
Inventors:

Wenjie Li, Poughkeepsie, NY (US);

Pushkara Rao Varanasi, Poughkeepsie, NY (US);

Ranee Kwong, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C 1/73 ; G03F 7/039 ; G03F 7/30 ; G03F 7/20 ; G03F 7/36 ;
U.S. Cl.
CPC ...
G03C 1/73 ; G03F 7/039 ; G03F 7/30 ; G03F 7/20 ; G03F 7/36 ;
Abstract

Acid-catalyzed positive resist compositions suitable for bilayer or multilayer lithographic applications are enabled by the use of a combination of (a) an acid-sensitive imaging polymer, (b) a radiation-sensitive acid generator, and (c) a non-polymeric silicon additive. The imaging polymer is preferably imageable with 193 nm or shorter wavelength imaging radiation. The resist compositions preferably contain at least about 5 wt. % silicon based on the weight of the imaging polymer. The compositions generally provide reduced line edge roughness compared to conventional silicon-containing resists.


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