The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Nov. 09, 2001
Applicant:
Inventor:
Hideaki Amano, Fuchu, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 ; H01L 2/1306 ; H01L 2/13065 ; C23C 1/600 ;
U.S. Cl.
CPC ...
C23F 1/00 ; H01L 2/1306 ; H01L 2/13065 ; C23C 1/600 ;
Abstract
In a plasma CVD apparatus for applying a film deposition process to a semiconductor wafer (W), a wafer placement stage ( ) is provided at a center of a vacuum chamber ( ). The placement stage ( ) is mounted to a side wall ( ) via a support part ( ). An exhaust port ( ) having a diameter equal to or smaller than a diameter of the placement stage ( ) is provided under the placement stage ( ). A center axis (C ) of the exhaust port ( ) is displaced from a center axis of the placement stage ( ) in a direction opposite to an extending direction of the support part ( ), thereby achieving an efficient exhaust.