The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6762121 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 13, 2004

Filed:

Apr. 04, 2001
Applicant:
Inventors:

Jonathan D. Chapple-Sokol, Essex Junction, VT (US);

Randy W. Mann, Jericho, VT (US);

William J. Murphy, Essex Junction, VT (US);

Jed H. Rankin, Burlington, VT (US);

Daniel S. Vanslette, Highgate Springs, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/434 ; H01L 2/144 ;
U.S. Cl.
CPC ...
C23C 1/434 ; H01L 2/144 ;
Abstract

A method of ensuring against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents interaction between any fluorine that is released during the refractory material deposition step from interacting with the underlying silicide.


Find Patent Forward Citations

Chapple-Sokol, Jonathan. (2004). Method of forming refractory metal contact in an opening, and resulting structure (U.S. Patent No. 6762121). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6762121

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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