The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Oct. 17, 2002
Kelly T. Hurley, Boise, ID (US);
Graham Wolstenholme, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Semiconductor devices are disclosed utilizing at least one polysilicon structure in a stacked gate region according to the present invention. The stacked gate region includes a substrate, at least one trench, an oxide layer, at least one floating gate layer and the at least one polysilicon structure. The at least one polysilicon structure is formed adjacent to vertical edges of the at least one floating gate layer and above the oxide layer. The polysilicon structure, which includes polysilicon wings and ears, is used to increase the capacitive coupling of memory cells in memory devices, thereby allowing for further reduction or scaling in the size of memory cells and devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile