The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2004
Filed:
Sep. 26, 2000
Wakako Moriyama, Yokohama, JP;
Naoki Kai, Chigasaki, JP;
Hiroaki Hazama, Hachioji, JP;
Keiki Nagai, Tokyo, JP;
Yuji Fukazawa, Yokohama, JP;
Kazuo Saki, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Yasumasa Suizu, Oita, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.