The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Jun. 12, 2002
Miyako Matsui, Kokubunji, JP;
Mari Nozoe, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a method for inspecting positions and types of defects on wafers with circuit patterns in a semiconductor manufacturing process, inspection is made regardless of the types and materials of junctions of circuit patterns of the semiconductor devices, different kinds of defects being distinguished from one another. Further, electrification of the circuit pattern is prevented, and the area to be exposed to an electron beam is controlled evenly and at a desired voltage. During inspection of the positions and types of defects on a wafer using a charged-particle beam from a charged-particle source, an optical beam from an optical source as well as a charged-particle beam are applied to a junction of the circuit pattern of the wafer placed on a wafer holder. Thus, regardless of the types and materials of circuit patterns, a highly sensitive inspection is made according to contrasts in the defects of a captured image.