The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2004

Filed:

May. 18, 2001
Applicant:
Inventors:

Youngjin Park, Kyungki-do, KR;

Heon Lee, Sunnyvale, CA (US);

David E. Kotecki, Orono, ME (US);

Greg Costrini, Hopewell Junction, NY (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

Methods for fabricating a semiconductor device are disclosed. Parallel gate structures are formed on a substrate with spaces between the gate structures. A blanket depositing of a conductive material is performed to fill the spaces and cover the gate structures such that contact with the substrate is made by the conductive material. A mask is patterned to remain over active area regions. The mask remains over the spaces. The conductive material is removed in accordance with the mask to provide contacts formed from the conductive material which fills the spaces over the active areas. A dielectric layer is deposited over the gate structures and over the contacts. Holes down to the contacts are formed, and a conductive region is connected to the contacts through the holes.


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