The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2004
Filed:
Oct. 15, 2001
Applicant:
Inventors:
Takashi Terauchi, Tokyo, JP;
Akinobu Teramoto, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
A gate oxide film is formed on a substrate. Next, gate interconnections, each including a first silicon film, a silicide film and a dielectric film, are formed on the gate oxide film. Next, an impurity is implanted into the substrate while the gate interconnections are taken as a mask, thereby forming a first diffusion layer. Next, a second silicon film is formed over the entire surface of the substrate so as to cover the gate interconnections. Next, the second silicon film is thermally oxidized, thereby forming a thermal oxide film. An interlayer dielectric film is formed on the thermal oxide film.