The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2004
Filed:
Dec. 23, 2002
Yung-Tai Hung, Chiayi, TW;
Lee-Jen Chen, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A shallow trench isolation (STI) process is described. A patterned mask layer is formed on a substrate, and then a trench is formed in the substrate with the mask layer as a mask. A portion of the mask layer around the trench is removed, and a portion of the substrate around the top portion of the trench is removed with the remaining mask layer as a mask. A liner layer is formed in the trench. The liner layer on the top portion of the trench is then removed with a pre-deposition process of an HDP-CVD process. Thereafter, an insulating material is filled into the trench, and the mask layer is removed with an etchant. In STI process, the liner layer comprises a material that can also be etched by the etchant.