The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
May. 15, 2002
Akira Goda, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Kazuhiro Shimizu, Yokohama, JP;
Hiroaki Hazama, Hachioji, JP;
Hirohisa Iizuka, Yokohama, JP;
Seiichi Aritome, Yokohama, JP;
Wakako Moriyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A nonvolatile semiconductor memory device includes memory cell transistors, peripheral transistors, first post-oxidation films provided on the gate electrode of all of the memory cell transistors, second post-oxidation films provided on the gate electrode of all of the peripheral transistors, first insulating films provided on the first post-oxidation films and covering a side surface of the gate electrode of all of the memory cell transistors and second insulating films provided on the second post-oxidation films and covering a side surface of the gate electrode of all of the peripheral transistors. The first and second insulating films are harder for an oxidizing agent to pass therethrough than a silicon oxide film, and the first and second insulating films are oxidized.