The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Jul. 02, 2002
Chou-Feng Lee, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for reworking a metal particulate contaminated semiconductor wafer process surface following a metal dry etchback process including providing a semiconductor wafer including a dielectric insulating layer having anisotropically etched openings lined with a first barrier/adhesion layer formed according to a blanket deposition process and an overlying metal layer formed according to a blanket deposition process filling the anisotropically etched openings; dry etching in an etchback process to remove the metal layer to form a process surface revealing at least a portion of the first barrier/adhesion layer; performing a chemical mechanical polishing (CMP) process to rework the process surface to remove a remaining portion of the metal layer including the first barrier/adhesion layer to endpoint detection of the dielectric insulating layer; and, blanket depositing a second barrier/adhesion layer over the dielectric insulating layer.