The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2004
Filed:
Dec. 06, 2002
Hiromi Itoh, Tokyo, JP;
Yoshikazu Tsunemine, Tokyo, JP;
Keiichiro Kashihara, Tokyo, JP;
Akie Yutani, Tokyo, JP;
Tomonori Okudaira, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes ( ) that reach contact plugs ( ) are formed in an insulating film ( ). Then a dielectric film ( ) is formed on the surfaces of the holes ( ). Next the dielectric film ( ) on the bottoms of the holes ( ) are etched away to form holes ( ) reaching the contact plugs ( ). Lower electrodes ( ) are then formed to fill the holes ( ) and ( ).