The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Oct. 30, 2002
Renesas Technology Corp., Tokyo, JP;
Abstract
When a non-volatile memory cell which can store two bits per one memory cell and pass current bidirectionally is used, a bias power source potential is provided also to a bit line BL adjacent to two bit lines (BL and BL ) passing a sense current BL and BL Switch units are provided corresponding to each bit line for selectively connect to any one of a ground power source line, read power source line or bias power source line. The current flowing from a sense amplifier circuit to the adjacent bit line BL via adjacent memory cell can be reduced, and thus the current in the sense amplifier circuit is stabilized quickly. Accordingly, a non-volatile semiconductor memory device allows high-speed data reading operation.