The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Nov. 16, 1999
Nobutoshi Aoki, Kanagawa-ken, JP;
Ichiro Mizushima, Kanagawa-ken, JP;
Kazuya Ohuchi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A gate electrode of an n-channel IGFET includes a first region composed of at least a first IV group element and a second IV group element which are different from each other, and a second region composed of the first IV group element. Similarly, a gate electrode of a p-channel IGFET includes first and second regions. For example, the first region is made of SiGe while the second region is made of Si. In both of the n-channel and P-channel IGFET, silicide electrodes are formed on the gate electrodes N and P through silicidation of at least parts of the second regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile