The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Jun. 13, 2002
Chi-Feng Huang, Pingtung, TW;
Shyh-Chyi Wang, Taichung, TW;
Chih-Hsien Lin, Hsin-chu, TW;
Chun-Hon Chen, Hsin-chu, TW;
Tien-I Bao, Hsin-chu, TW;
Syun-Ming Jang, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure which comprises a first capacitor plate layer having formed thereupon a capacitor dielectric layer in turn having formed thereupon a second capacitor plate layer, wherein each of the foregoing layers having an exposed sidewall to thus form a series of exposed sidewalls. The capacitor structure also comprises a silicon oxide dielectric layer formed passivating the series of exposed sidewalls of the first capacitor plate layer, the capacitor dielectric layer and the second capacitor plate layer a silicon oxide dielectric layer.